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| TP0620 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -200V RDS(ON) (max) 12 ID(ON) (min) -0.75A VGS(th) (max) -2.4V Order Number / Package TO-92 TP0620N3 MIL visual screening available Features Low threshold -- -2.4 V max High input impedance Low input capacitance -- 85pF typical Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. BVDSS BVDGS 20V -55C to +150C 300C SGD TO-92 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. TP0620 Thermal Characteristics Package TO-92 ID (continuous)* -175mA ID (pulsed) -0.8A Power Dissipation @ TC = 25C 1W jc ja IDR* -175mA IDRM -0.8A C/W 125 C/W 170 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min -200 -1.0 -2.4 -4.5 -100 -10 -1.0 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current -0.25 -0.75 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 100 150 85 30 10 150 85 35 10 15 20 16 -1.8 V ns VGS = 0V, ISD = -0.5A VGS = 0V, ISD = -0.5A ns VDD = -25V ID = -0.75A RGEN = 25 pF 9.0 7.0 15 12 1.7 %/C m Typ Max Unit V V mV/C nA A mA Conditions VGS = 0V, ID = -2.0mA VGS = VDS, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = -5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5V, ID = -0.1A VGS = -10V, ID = -0.2A VGS = -10V, ID = -0.2A VDS = -25V, ID = -0.4A VGS = 0V, VDS = -25V f = 1 MHz A Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 2 D.U.T. OUTPUT RL VDD TP0620 Typical Performance Curves Output Characteristics -2.0 -1.0 VGS = -10 -1.6 VGS = -10 -8V -0.8 -6V Saturation Characteristics -8V ID (amperes) -0.8 ID (amperes) -1.2 -0.6 -6V -0.4 -4V -0.2 -0.4 -4V 0 0 -10 VDS (volts) -20 -30 -40 -50 0 0 -2 VDS (volts) -4 -6 -8 -10 Transconductance vs. Drain Current 250 2.0 Power Dissipation vs. Case Temperature VDS = -25V 200 TA = -55C TA = 25C GFS (siemens) PD (watts) 150 100 TA = 150C 1.0 TO-92 50 0 0 ID (amperes) Maximum Rated Safe Operating Area -1.0 -2.0 0 0 25 50 75 100 125 150 TC (C) Thermal Response Characteristics 1.0 -10 Thermal Resistance (normalized) 0.8 ID (amperes) -1.0 0.6 -0.1 0.4 TO-92 (DC) 0.2 -0.01 T C = 25C -1 -10 VDS (volts) -100 -1000 0 0.001 TO-92 PD = 1W TC = 25C 0.01 tp (seconds) 0.1 1 10 3 TP0620 Typical Performance Curves BVDSS Variation with Temperature 1.15 20 On-Resistance vs. Drain Current 1.1 16 VGS = -5V VGS = -10V BVDSS (normalized) 1.05 RDS(ON) (ohms) 12 1.0 8 0.95 4 0.9 -50 0 50 100 150 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 Tj (C) Transfer Characteristics -2.0 1.2 ID (amperes) V(th) and RDS Variation with Temperature 1.66 -5 VDS = -25V A 5 C = 1.1 1.33 VGS(th) (normalized) ID (amperes) 1.0 T A RDS(ON) @ -10V, -0.2A 1.0 -1.0 = TA 15 0 C 0.9 0.66 V(th) @ -1mA 0.8 0.33 0 0 -2 -4 -6 -8 -10 0.7 -50 0 50 100 150 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 200 -10 Tj (C) Gate Drive Dynamic Characteristics 0 f = 1MHz -8 150 VDS = -10V 170 pF C (picofarads) VGS (volts) -6 100 CISS VDS = -40V -4 50 COSS CRSS 0 0 -10 -20 -30 -40 -2 65 pF 0 0 0.5 1.0 1.5 2.0 2.5 VDS (volts) QG (nanocoulombs) 11/12/01 (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) T = 25 C |
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